Fabrication of silicon-germanium fin structure having silicon-rich outer surface
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 12, 2019
Grant Date -
Jan 25, 2018
app pub date -
Jun 5, 2017
filing date -
Jul 20, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method includes forming an oxide layer on a silicon-germanium (SiGe) fin formed on a substrate. The first oxide layer comprises a mixture of a germanium oxide compound (GeOx) and a silicon oxide compound (SiOx). The first oxide layer is modified to create a Si-rich outer surface of the SiGe fin. A silicon nitride layer is deposited on the modified first oxide layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully