PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EARTH NITRIDE DIFFUSION BARRIER REGIONS
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Jun 5, 2017
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Sep 8, 2015
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Abstract
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
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