N-channel gallium nitride transistors
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United States of America Patent
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Aug 21, 2018
Grant Date -
Jan 25, 2018
app pub date -
Dec 18, 2014
filing date -
Dec 18, 2014
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Abstract
The present description relates to n-channel gallium nitride transistors which include a recessed gate electrode, wherein the polarization layer between the gate electrode and the gallium nitride layer is less than about 1 nm. In additional embodiments, the n-channel gallium nitride transistors may have an asymmetric configuration, wherein a gate-to drain length is greater than a gate-to-source length. In further embodiment, the n-channel gallium nitride transistors may be utilized in wireless power/charging devices for improved efficiencies, longer transmission distances, and smaller form factors, when compared with wireless power/charging devices using silicon-based transistors.
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