MOSFET AND A METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Nov 29, 2016
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Jul 19, 2016
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Abstract
A MOSFET including a source region and a drain region are unsymmetrical in structure, with the horizontal junction depth of the drain region being greater than that of the source region, and the vertical junction depth of the drain region being greater than that of the source region; the breakdown voltage of the device can be raised by increasing the horizontal and vertical junction depths of the drain region, and the horizontal dimension of the device can be diminished by reducing the horizontal and vertical junction depths of the source region; a gate dielectric layer is unsymmetrical in structure-and the GIDL effect in the device can be reduced by increasing the thickness of the first gate dielectric section, and the driving current of the device can be increased by reducing the thickness of the second gate dielectric section.
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