High density multi-time programmable resistive memory devices and method of forming thereof
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United States of America Patent
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May 12, 2020
Grant Date -
Jan 25, 2018
app pub date -
Sep 14, 2017
filing date -
Feb 12, 2016
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Abstract
Multi-time programmable (MTP) random access memory (RRAM) devices and methods for forming a MTP RRAM device are disclosed. The method includes providing a substrate. The substrate is prepared with at least a first region for accommodating one or more multi-programmable based resistive random access memory (RRAM) cell. A fin-type based selector is provided over the substrate in the first region. A storage element of the RRAM cell is formed over the fin-type based selector. The fin-type based selector is coupled in series with the storage element of the RRAM cell.
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