SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND IMAGING SYSTEM
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United States of America Patent
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Issued Date -
Jan 25, 2018
app pub date -
Jun 23, 2017
filing date -
Jul 21, 2016
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Abstract
A solid-state imaging device has: a counter dope region of a first conductivity type which is formed so as to surround a drain region of a transfer transistor of the solid-state imaging device and in which impurity concentration of the first conductivity type is lower than that of the drain region; and an isolating region of a second conductivity type which is formed in a deep region below channel regions of a plurality of transistors and in which impurity concentration of the second conductivity type is higher than that of a well region, wherein a depth position of a lower surface of the counter dope region is deeper than a depth position of a lower surface of a buried channel region.
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