HYBRID HIGH-K DIELECTRIC MATERIAL FILM STACKS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES
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Jun 8, 2017
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Jul 19, 2016
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Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include source and drain electrodes formed on a substrate, a gate insulating layer formed on a substrate covering the source and drain electrodes, wherein the gate insulating layer is hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer comprising metal, and a gate electrode formed above or below the gate insulating layer
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