Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 12, 2021
Grant Date -
Jan 25, 2018
app pub date -
Jul 12, 2017
filing date -
Jul 19, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully