Semiconductor memory device and method of manufacturing the same
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United States of America Patent
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Oct 29, 2019
Grant Date -
Jan 25, 2018
app pub date -
Sep 13, 2016
filing date -
Jul 22, 2016
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Abstract
A semiconductor memory device according to an embodiment comprises a substrate, a plurality of first conductive films, a memory columnar body, and a first structure. The plurality of first conductive films are stacked in a first direction above the substrate and extend in a second direction intersecting the first direction and in a third direction intersecting the first direction and the second direction. The memory columnar body extends in the first direction and has a side surface covered by the plurality of first conductive films. The first structure extends in the second direction and divides the plurality of first conductive films in the third direction. Moreover, each of the memory columnar body and the first structure comprises: a memory insulating film provided on a side surface of the first conductive film; and a first semiconductor layer provided on a side surface of the memory insulating film.
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