Three-dimensional semiconductor device including integrated circuit, transistors and transistor components and method of fabrication

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United States of America Patent

PATENT NO 10453850
APP PUB NO 20180026042A1
SERIAL NO

15654327

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Importance

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Abstract

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A 3-D IC includes a substrate having a substrate surface. A first semiconductor device has a first electrical contact and is formed in a first area of the surface on a first plane substantially parallel to the substrate surface. A second semiconductor device has a second electrical contact and is formed in a second area of the surface on a second plane substantially parallel to the surface and vertically spaced from the first plane in a direction substantially perpendicular to the surface. A first electrode structure includes opposing top and bottom surfaces substantially parallel to the substrate surface, and a sidewall connecting the top and bottom surfaces such that the electrode structure forms a three dimensional electrode space. A conductive fill material is provided in the electrode space, and a dielectric layer electrically separates the conductive fill material into a first electrode electrically connected to the first contact of the first semiconductor device and a second electrode electrically connected to the second semiconductor device and electrically insulated from the first electrode. A first circuit terminal extends vertically from the top or bottom surface of the electrode structure and is electrically connected to the first electrode.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
deVilliers, Anton Clifton Park, US 84 1044
Smith, Jeffrey Clifton Park, US 263 2937

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