Vertical memory devices and methods of manufacturing the same
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United States of America Patent
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Oct 20, 2020
Grant Date -
Jan 25, 2018
app pub date -
Sep 22, 2017
filing date -
Jan 14, 2015
priority date (Note) -
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Abstract
Vertical memory devices, and methods of manufacturing the same, include providing a substrate including a cell array region and a peripheral circuit region, forming a mold structure in the cell array region, forming an opening for a common source line passing through the mold structure and extending in a first direction perpendicular to a top surface of the substrate, forming a first contact plug having an inner sidewall delimiting a recessed region in the opening for the common source line, and forming a common source bit line contact electrically connected to the inner sidewall of the first contact plug.
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