Semiconductor structure with resistor layer and method for forming the same

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United States of America Patent

PATENT NO 10276561
APP PUB NO 20180026031A1
SERIAL NO

15714226

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Abstract

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A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes transferring the substrate from a stage to a deposition chamber, and no heating operation is performed on the stage. The method also includes depositing a resistor layer on the substrate. The resistor layer may have a major structure that is amorphous.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, I-Tseng Taipei, TW 5 8
Huang, Chun-Hsien Hsinchu, TW 116 347
Huang, Hon-Lin Hsinchu, TW 57 598
Lin, Yu-Hung Taichung, TW 126 853

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