Semiconductor integrated circuit device relating to an electrical over stress protecting circuit
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United States of America Patent
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Nov 27, 2018
Grant Date -
Jan 25, 2018
app pub date -
Nov 29, 2016
filing date -
Jul 19, 2016
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Abstract
A semiconductor integrated circuit device may include a first discharging unit and a second discharging unit. The first discharging unit may be coupled between a first line having a first voltage level and a second line having a second voltage level different from the first voltage level. The first discharging unit may be configured to discharge an electrical over stress (EOS) generated from the first line. The second discharging unit may be coupled between the first line and the second line. The second discharging unit may discharge the EOS in the first line to the second line based on an output signal from the first discharging unit.
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