INTEGRATED CIRCUIT (IC) STRUCTURE FOR HIGH PERFORMANCE AND FUNCTIONAL DENSITY

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United States of America Patent

SERIAL NO

15218488

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Abstract

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An integrated circuit (IC) provides high performance and high functional density. A first back-end-of-line (BEOL) interconnect structure and a second BEOL interconnect structure are respectively under and over a semiconductor substrate. A first electronic device and a second electronic device are between the semiconductor substrate and respectively a bottom of the first BEOL interconnect structure and a top of the second BEOL interconnect structure. A through substrate via (TSV) extends through the semiconductor substrate, from the first BEOL interconnect structure to the second BEOL interconnect structure. A method for manufacturing the IC is also provided.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Kuan-Chieh Hsinchu City, TW 111 472
Kao, Min-Feng Chiayi City, TW 157 930
Lin, Hsing-Chih Tainan City, TW 84 313
Liu, Jen-Cheng Hsin-Chu City, TW 424 4064
Yaung, Dun-Nian Taipei City, TW 608 6886

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