Power electronics assemblies having a semiconductor device with metallized embedded cooling channels
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United States of America Patent
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Nov 6, 2018
Grant Date -
Jan 25, 2018
app pub date -
Jul 25, 2016
filing date -
Jul 25, 2016
priority date (Note) -
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Abstract
A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate layer that extends from the first device surface to a substrate-drift interface, a semiconductor drift layer that extends from the substrate-drift interface towards the second device surface, and a semiconductor fluid channel is positioned within the semiconductor substrate layer of the semiconductor device. Further, the semiconductor fluid channel includes an inner surface. Moreover, a fluid channel metallization layer is positioned along the inner surface of the semiconductor fluid channel.
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