Method of manufacturing integrated circuit device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10115640
APP PUB NO 20180025947A1
SERIAL NO

15460273

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Abstract

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A method of manufacturing an integrated circuit device includes providing a substrate with a pattern structure, the pattern structure including a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween. At least one support structure that contacts an upper surface of the pattern structure and extends on the pattern structure in a second direction that crosses the first direction is formed. A buried layer that fills the spaces between the plurality of first patterns while the at least one support structure contacts the upper surface of the pattern structure is formed. The at least one support structure is separated from the pattern structure.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Hee-don Seoul, KR 4 32
Jeong, Yoo-jin Seoul, KR 1 8
Kim, Min-woo Gimhae-si, KR 72 540
Park, Young-wook Osan-si, KR 86 2598

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