Aligning conductive vias with trenches

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United States of America Patent

PATENT NO 9972533
SERIAL NO

15677539

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Abstract

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A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel material, and removing portions of the layer of sacrificial mandrel material to expose portions of the second hardmask and form a first and second sacrificial mandrel. Spacers are formed adjacent to the sacrificial mandrels. A filler material is deposited on the second hardmask, and a first mask is formed on the filler material. An exposed portion of the second sacrificial mandrel is removed to form a first cavity. The depth of the first cavity is increased. The first mask, portions of the first and second sacrificial mandrels, the filler material, portions of the second hardmask, the spacers, portions of the planarization layer and the first hardmask are removed. A second cavity is formed and the first and second cavities are filled with a conductive material.

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Patent Owner(s)

Patent OwnerAddress
ELPIS TECHNOLOGIES INC1891 ROBERSTON ROAD SUITE 100 OTTAWA K2H 5B7

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burns, Sean D Hopewell Junction, US 73 760
Clevenger, Lawrence A LaGrangeville, US 787 5051
Colburn, Matthew E Schenectady, US 198 3400
Kanakasabapathy, Sivananda K Niskayuna, US 196 2358
Mignot, Yann A M Slingerlands, US 32 67
Penny, Christopher J Saratoga Springs, US 181 1878
Quon, Roger A Rhinebeck, US 65 312
Saulnier, Nicole Albany, US 31 28

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