Self-aligned contact cap
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United States of America Patent
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Mar 27, 2018
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N/A
app pub date -
Jul 21, 2016
filing date -
Jul 21, 2016
priority date (Note) -
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Abstract
A method for forming a semiconductor device includes recessing a gate conductor in a gate structure to form a first divot, forming a gate cap in the first divot and recessing a dielectric fill that encapsulates the gate structures to a position below a top of the gate cap. An extension layer is deposited over the dielectric fill and the top of the gate cap and is planarized to the top of the gate cap. The extension layer is expanded to form a profile growth layer that is thicker than the extension layer and creates a second divot over the gate cap. A top cap is formed in the second divot to provide a cap with a thickness of the gate cap and the top cap.
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