METHOD FOR MANUFACTURING TRANSISTOR AND DISPLAY DEVICE
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United States of America Patent
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Jul 19, 2017
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Jul 25, 2016
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Abstract
A transistor with high productivity and a method for manufacturing the transistor are provided. In the formation of a bottom-gate transistor using a metal oxide layer as a semiconductor layer where a channel is formed, a gate insulating layer including silicon nitride is formed, and then plasma treatment is successively performed in the same treatment chamber under an atmosphere containing oxygen. After that, the metal oxide layer is formed.
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