METHOD OF FABRICATING SEMICONDUCTOR DEVICE, VACUUM PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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N/A
Issued Date -
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app pub date -
Jul 19, 2017
filing date -
Jul 21, 2016
priority date (Note) -
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Abstract
There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TOKYO ELECTRON LIMITED | 3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325 |
International Classification(s)

- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
HASHIMOTO, Hiroyuki | Nirasaki City, JP | 179 | 2089 |
# of filed Patents : 179 Total Citations : 2089 | |||
HAYAKAWA, Takashi | Tokyo, JP | 71 | 525 |
# of filed Patents : 71 Total Citations : 525 | |||
NIINO, Reiji | Nirasaki City, JP | 22 | 1904 |
# of filed Patents : 22 Total Citations : 1904 | |||
OKUNO, Hiroshi | Tokyo, JP | 55 | 2015 |
# of filed Patents : 55 Total Citations : 2015 | |||
YAMAGUCHI, Tatsuya | Nirasaki City, JP | 160 | 3658 |
# of filed Patents : 160 Total Citations : 3658 | |||
YATSUDA, Koichi | Tokyo, JP | 29 | 817 |
# of filed Patents : 29 Total Citations : 817 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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