METHOD OF FABRICATING SEMICONDUCTOR DEVICE, VACUUM PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS

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United States of America Patent

SERIAL NO

15654307

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Abstract

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There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325

International Classification(s)

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  • 2017 Application Filing Year
  • H01L Class
  • 30754 Applications Filed
  • 25260 Patents Issued To-Date
  • 82.14 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HASHIMOTO, Hiroyuki Nirasaki City, JP 179 2089
HAYAKAWA, Takashi Tokyo, JP 71 525
NIINO, Reiji Nirasaki City, JP 22 1904
OKUNO, Hiroshi Tokyo, JP 55 2015
YAMAGUCHI, Tatsuya Nirasaki City, JP 160 3658
YATSUDA, Koichi Tokyo, JP 29 817

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  • 2 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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