METHOD OF FABRICATING SEMICONDUCTOR DEVICE, VACUUM PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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Jul 19, 2017
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Jul 21, 2016
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Abstract
There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.
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