Semiconductor device and method for manufacturing the same
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United States of America Patent
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Feb 9, 2021
Grant Date -
Jan 25, 2018
app pub date -
Jul 19, 2017
filing date -
Jul 25, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Aug 9, 2028 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Aug 9, 2032 |
