Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

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United States of America Patent

PATENT NO 9916981
SERIAL NO

15430769

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Abstract

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A semiconductor device according to an embodiment includes a SiC layer having a first and a second plane; a first electrode having a first region in the SiC layer, the inclination angle of a side surface of the first region being 60 to 85 degrees; a second electrode; a first gate electrode; a second gate electrode facing the first gate electrode; first and second gate insulating layers; a first region of a first conductivity type in the SiC layer; a second region of a second conductivity type between the first region and the first gate insulating layer; a third region of the second conductivity type between the first region and the second gate insulating layer; a sixth region of the second conductivity type between the first region and the first region; and a seventh region of the second conductivity type between the first region and the sixth region.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kanie, Souzou Himeji, JP 4 15
Kono, Hiroshi Himeji, JP 105 772
Ohashi, Teruyuki Kawasaki, JP 50 126
Shimizu, Tatsuo Shinagawa, JP 299 2391

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