High throughput semiconductor deposition system
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 29, 2019
Grant Date -
Jan 25, 2018
app pub date -
Sep 18, 2017
filing date -
May 16, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 μm/minute.
First Claim
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 6 Citation Count
- H01L Class
- 32.24 % this patent is cited more than
- 6 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 29, 2026 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 29, 2030 |
