HOLLOW CATHODE PLASMA SOURCE

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United States of America Patent

SERIAL NO

15532855

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Abstract

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The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (1, 2), each electrode comprising an elongated cavity (4), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma source cavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (11), and outlet nozzle width (12).

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Patent Owner(s)

Patent OwnerAddress
AGC FLAT GLASS NORTH AMERICA INC11175 CICERO DRIVE SUITE 400 ALPHARETTA GA 30022-1167
ASAHI GLASS CO LTDTOKYO TOKYO METROPOLIS
AGC GLASS EUROPEBELGIUM LEUVEN FLEMISH BRABANT

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BIQUET, Thomas Gosselies, BE 1 24
CHAMBERS, John San Francisco, US 32 312
MASCHWITZ, Peter Sebastopol, US 24 861
WIAME, Hughes Gosselies, BE 1 24

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