Non-volatile memory device and method of fabricating the same

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United States of America Patent

PATENT NO 9984758
SERIAL NO

15658293

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Abstract

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Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory includes a channel layer; a data storage layer disposed on the channel layer; a plurality of control gates arranged on the data storage layer and spaced apart from one another; and one or more sub-gates, at least one of the sub-gates being arranged between two adjacent control gates.

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Patent Owner(s)

  • SK HYNIX, INC.; SOGANG UNIVERSITY RESEARCH FOUNDATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Woo Young Seoul, KR 79 571

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