Memory cell having a magnetic Josephson junction device with a doped magnetic layer
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United States of America Patent
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May 15, 2018
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Jul 24, 2016
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Jul 24, 2016
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Abstract
Examples described in this disclosure relate to a memory cell having a magnetic Josephson junction device with a doped magnetic layer. In one example, a memory cell including a magnetic Josephson junction (MJJ) device is provided. The MJJ device may include at least a first layer formed above a second layer and a third layer formed below the second layer, where the first layer is a free magnetic layer, the second layer is a non-magnetic layer, where the third layer is a fixed magnetic layer. The free magnetic layer may comprise a magnetic alloy doped with at least one of Vanadium, Zirconium, Molybdenum, or Hafnium, and the fixed magnetic layer may comprise an un-doped second magnetic alloy.
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