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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
ZEON CORPORATION	6-2 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8246

International Classification(s)

• C08F:MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONL....
• G03F:PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNE....

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
HOSHINO, Manabu	Chiyoda-ku, Tokyo, JP	44	82
# of filed Patents : 44 Total Citations : 82

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Patent Citation Ranking

• 2 Citation Count
• C08F Class

• 38.55 % this patent is cited more than
• 7 Age

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Full Text

US Patent Application No: 2016/0107,286

CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME

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Abstract

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A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, a triazole-based compound, a quaternary phosphonium salt and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is 3.0 or more and less than 7.0.

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Description

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Claims

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