2H to 1T phase based transition metal dichalcogenide sensor for optical and electronic detection of strong electron donor chemical vapors

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United States of America Patent

PATENT NO 10801987
APP PUB NO 20180024085A1
SERIAL NO

15652491

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Abstract

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Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

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Patent Owner(s)

Patent OwnerAddress
THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY875 NORTH RANDOLPH STREET SUITE 1425 ARLINGTON VA 22203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Campbell, Paul M Alexandria, US 8 262
Culbertson, James C Alexandria, US 4 12
Friedman, Adam L Silver Spring, US 15 49
Hanbicki, Aubrey T Washington, US 5 6
Perkins, F Keith Alexandria, US 16 149

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