Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
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United States of America Patent
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May 19, 2020
Grant Date -
Jan 25, 2018
app pub date -
May 6, 2016
filing date -
Sep 16, 2015
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Abstract
There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 μm and not more than 50 μm and having an average aspect ratio of not less than 4 and not more than 50.
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