Semiconductor device for high-voltage circuit
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United States of America Patent
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Aug 27, 2019
Grant Date -
Jan 18, 2018
app pub date -
Sep 21, 2017
filing date -
Sep 2, 2013
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Abstract
Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented.
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