Semiconductor memory device
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United States of America Patent
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May 29, 2018
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N/A
app pub date -
Mar 7, 2017
filing date -
Jul 15, 2016
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Abstract
A semiconductor memory device including first lines and second lines overlapping and intersecting each other, variable resistance memory elements disposed at intersections between the first lines and the second lines, and switching elements disposed between the variable resistance memory elements and the first lines. At least one of the switching elements includes first and second chalcogenide compound layers, and conductive nano-dots disposed between the first and second chalcogenide compound layers.
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