Semiconductor memory device

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United States of America Patent

PATENT NO 9985204
SERIAL NO

15451961

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Abstract

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A semiconductor memory device including first lines and second lines overlapping and intersecting each other, variable resistance memory elements disposed at intersections between the first lines and the second lines, and switching elements disposed between the variable resistance memory elements and the first lines. At least one of the switching elements includes first and second chalcogenide compound layers, and conductive nano-dots disposed between the first and second chalcogenide compound layers.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI-DO 16677

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Dongho Hwaseong-si, KR 43 87
Lee, Ja bin Hwaseong-si, KR 11 44
Lee, Jinwoo Seoul, KR 161 923
Park, Jeonghee Hwaseong-si, KR 35 207
Shin, Heeju Seoul, KR 16 137
Wu, Zhe Suwon-si, KR 84 1029

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Patent Citation Ranking

  • 2 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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