Magnetic material sputtering target and method for producing same

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United States of America Patent

PATENT NO 10644230
SERIAL NO

15543070

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magnetic material sputtering target formed from a sintered body containing at least Co and/or Fe and B, and containing B in an amount of 10 to 50 at %, wherein an oxygen content is 100 wtppm or less. Since the magnetic material sputtering target of the present invention can suppress the generation of particles caused by oxides, the present invention yields superior effects of being able to improve the yield upon producing magnetoresistive films and the like.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION10-4 TORANOMON 2-CHOME MINATO-KU TOKYO 1058417

International Classification(s)

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  • 2016 Application Filing Year
  • C23C Class
  • 3247 Applications Filed
  • 2111 Patents Issued To-Date
  • 65.02 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arakawa, Atsutoshi Ibaraki, JP 27 270

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  • 0 Citation Count
  • C23C Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1055695351018101 - 1011 - 2021 - 3031 - 4041 - 5051 - 600501001502002503003504004505005506006507007508008509009501000105011001150

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