Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 14, 2020
Grant Date -
Jan 18, 2018
app pub date -
Sep 28, 2017
filing date -
Mar 31, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A magnetoresistance effect element includes a bias layer comprised of an antiferromagnetic material and having a shape in which a first length in a first direction greater than a second length in a second direction perpendicular to the first direction, a recording layer comprised of a ferromagnetic material and being disposed on the bias layer, a direction of magnetization of the recording layer being reversible, a barrier layer comprised of an insulation material and being disposed on the recording layer, and a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer, a direction of magnetization of the reference layer being substantially fixed.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully