Semiconductor light emitting device
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United States of America Patent
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Jan 8, 2019
Grant Date -
Jan 18, 2018
app pub date -
Feb 21, 2017
filing date -
Jul 18, 2016
priority date (Note) -
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Abstract
A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.
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