Tunneling transistor and method of fabricating the same
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United States of America Patent
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Apr 30, 2019
Grant Date -
Jan 18, 2018
app pub date -
Jul 18, 2016
filing date -
Jul 18, 2016
priority date (Note) -
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Abstract
A tunneling transistor and a method of fabricating the same, the tunneling transistor includes a fin shaped structure, a source structure and a drain structure, and a gate structure. The fin shaped structure is disposed in a substrate, and the source structure and the drain structure are disposed the fin shaped structure, wherein an entirety of the source structure and an entirety of the drain structure being of complementary conductivity types with respect to one another and having different materials. A channel region is disposed in the fin shaped structure between the source structure and the drain structure and the gate structure is disposed on the channel region. That is, a hetero tunneling junction is vertically formed between the channel region and the source structure, and between the channel region and the drain structure in the fin shaped structure.
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