Method for reducing contact resistance in semiconductor structures
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United States of America Patent
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Feb 13, 2018
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app pub date -
Jul 13, 2016
filing date -
Jul 13, 2016
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Abstract
Semiconductor structures and methods reduce contact resistance, while retaining cost effectiveness for integration into the process flow by introducing a heavily-doped contact layer disposed between two adjacent layers. The heavily-doped contact layer may be formed through a solid-phase epitaxial regrowth method. The contact resistance may be tuned by adjusting dopant concentration and contact area configuration of the heavily-doped epitaxial contact layer.
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