Semiconductor device
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United States of America Patent
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Oct 16, 2018
Grant Date -
Jan 18, 2018
app pub date -
Feb 22, 2016
filing date -
Feb 25, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes: a semiconductor substrate having a drift layer; a base layer and a carrier storage layer over the drift layer; a collector layer on the drift layer opposite to the base layer; multiple trenches penetrating the base layer and the carrier storage layer and reaching the drift layer; a gate electrode on an insulation film in each trench; and an emitter region in a surface portion of the base layer contacting each trench. A thickness of at least a portion of a part of the gate insulation film on a sidewall of each trench on a collector layer side from a peak position, at which the impurity concentration of the carrier storage layer is highest, is thicker than a thickness of another part of the gate insulation film on the sidewall of an opening portion side of the trench from the peak position.
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