Lateral bipolar junction transistor with controlled junction
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United States of America Patent
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Apr 17, 2018
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app pub date -
Jul 15, 2016
filing date -
Jul 15, 2016
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Abstract
A method of forming a lateral bipolar junction transistor (LBJT) that includes providing a germanium containing layer on a crystalline oxide layer, and patterning the germanium containing layer stopping on the crystalline oxide layer to form a base region. The method may further include forming emitter and collector extension regions on opposing sides of the base region using ion implantation, and epitaxially forming an emitter region and collector region on the crystalline oxide layer into contact with the emitter and collector extension regions. The crystalline oxide layer provides a seed layer for the epitaxial formation of the emitter and collector regions.
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