Semiconductor device including field effect transistor and a method for fabricating the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 4, 2018
Grant Date -
Jan 18, 2018
app pub date -
Jul 14, 2016
filing date -
Jul 14, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.
First Claim
Other Claims data not available
Family
Loading Family data...
International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Mar 4, 2026 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Mar 4, 2030 |
