Semiconductor device including field effect transistor and a method for fabricating the same
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United States of America Patent
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Sep 4, 2018
Grant Date -
Jan 18, 2018
app pub date -
Jul 14, 2016
filing date -
Jul 14, 2016
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Abstract
In a method of fabricating a field effect transistor, a fin structure made of a first semiconductor material is formed so that the fin structure protrudes from an isolation insulating layer disposed over a substrate. A gate structure is formed over a part of the fin structure, thereby defining a channel region, a source region and a drain region in the fin structure. After the gate structure is formed, laser annealing is performed on the fin structure.
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