FinFET device including a stem region of a fin element

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United States of America Patent

PATENT NO 10461176
APP PUB NO 20180019325A1
SERIAL NO

15676027

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Abstract

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A finFET device having a substrate and a fin disposed on the substrate. The fin includes a passive region, a stem region overlying the passive region, and an active region overlying the stem region. The stem region has a first width and the active region has a second width. The first width is less than the second width. The stem region and the active region also have different compositions. A gate structure is disposed on the active region.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ching, Kuo-Cheng Hsinchu County, TW 374 8264
Colinge, Jean-Pierre Hsinchu, TW 163 5338
Wu, Zhiqiang Hsinchu County, TW 362 5279

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