Method for high temperature annealing of a nitride semiconductor layer
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United States of America Patent
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Nov 6, 2018
Grant Date -
Jan 18, 2018
app pub date -
May 30, 2017
filing date -
Jul 13, 2016
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Abstract
In case of performing annealing at a temperature of 1300° C. or higher, it is not possible to sufficiently suppress escape of nitrogen from a GaN layer even if a cap layer is provided thereon. Thereby, the front surface of the GaN layer is roughened. A semiconductor device manufacturing method of manufacturing a semiconductor device having a nitride semiconductor layer is provided. The semiconductor device manufacturing method includes: implanting, into a predetermined region of the nitride semiconductor layer, n-type or p-type impurities relative to the nitride semiconductor layer; forming, by atomic layer deposition, a first protective film containing a nitride on and in direct contact with at least the predetermined region; and annealing the nitride semiconductor layer and the first protective film at a temperature of 1300° C. or higher.
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