Common metal contact regions having different Schottky barrier heights and methods of manufacturing same
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United States of America Patent
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Apr 30, 2019
Grant Date -
Jan 18, 2018
app pub date -
Sep 28, 2017
filing date -
Mar 4, 2016
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Abstract
Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include a semiconductor substrate having an n-FET region and a p-FET region each having source/drain regions; a titanium silicon (Ti—Si) intermix phase Ti liner on an upper surface of the n-FET region source/drain regions; and titanium silicide (TiSi) forming an upper surface of the p-FET region source/drain regions.
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