Thin film transistor, manufacturing method therefor, oxide back plate and display apparatus
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United States of America Patent
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Dec 25, 2018
Grant Date -
Jan 18, 2018
app pub date -
Apr 6, 2016
filing date -
Jun 12, 2015
priority date (Note) -
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Abstract
Provided are a thin film transistor, a manufacturing method therefor, an oxide back plate and a display apparatus. The thin film transistor comprises: an oxide active layer (4) and source and drain electrodes (6a, 6b) connected to the oxide active layer (4), wherein the source and drain electrodes (6a, 6b) comprise a main portion (M) and a connective portion (C), the main portion (M) being isolated from the active layer (4), and being electrically connected to the active layer (4) via the connective portion (C), and an electrical resistivity of the connective portion (C) is greater than that of the main portion (M). In the thin film transistor provided above, since the main portions of the source and drain electrodes are not in contact with the oxide active layer, a metal with a relatively high electrical conductivity can be used as the source and drain electrodes, without having a relatively great impact on the electrical performance of the oxide active layer.
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