Compound semiconductor device and method of manufacturing the same
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United States of America Patent
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Jan 29, 2019
Grant Date -
Jan 18, 2018
app pub date -
Jun 8, 2017
filing date -
Jul 12, 2016
priority date (Note) -
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Abstract
A compound semiconductor device includes: a carrier transit layer; a carrier supply layer over the carrier transit layer; a source electrode and a drain electrode above the carrier supply layer; a gate electrode above the carrier supply layer between the source electrode and the drain electrode; and a first insulating film, a second insulating film, and a third insulating film above the carrier supply layer between the gate electrode and the drain electrode. The gate electrode includes a portion above the third insulating film, a first concentration of electron traps in the first insulating film is higher than a second concentration of electron traps in the second insulating film, and a third concentration of electron traps in the third insulating film is higher than the second concentration of the electron traps in the second insulating film.
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