Power semiconductor device
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United States of America Patent
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Nov 13, 2018
Grant Date -
Jan 18, 2018
app pub date -
Mar 18, 2015
filing date -
Mar 18, 2015
priority date (Note) -
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Abstract
The present invention relates to a power semiconductor device which includes: a first conductivity-type silicon carbide semiconductor layer; a switching device which is formed on the silicon carbide semiconductor layer; a second conductivity-type electric field relaxation impurity region which is formed in a terminal portion of a formation region of the switching device and which relaxes an electric field of the terminal portion; and a first conductivity-type added region which is provided between second conductivity-type well regions of a plurality of unit cells that constitutes the switching device, and at least on an outer side of the electric field relaxation impurity region, and which has an impurity concentration higher than that in the silicon carbide semiconductor layer.
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