Semiconductor device and its manufacturing method
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United States of America Patent
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Mar 5, 2019
Grant Date -
Jan 18, 2018
app pub date -
Jul 13, 2017
filing date -
Jul 14, 2016
priority date (Note) -
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Abstract
In an element isolation region defining an element formation region, there is formed an element isolation unit including an element isolation unit and the other element isolation unit. The other element isolation unit is arranged in a direction intersecting a direction in which the element isolation unit extends from the element isolation unit. The element isolation unit includes a sidewall oxide film formed in a trench, a titanium film, a titanium nitride film, and a tungsten film. The tungsten film is formed to cover the bottom surface of a trench in the element isolation unit and to close an opening end of a trench in the other element isolation unit. A plug is formed in contact with the tungsten film of the element isolation unit.
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