Semiconductor device

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United States of America Patent

PATENT NO 10355073
APP PUB NO 20180019300A1
SERIAL NO

15448683

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Abstract

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A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Hyun-suk Hwaseong-si, KR 59 874
Park, Ji-woon Seoul, KR 18 97
Yu, Ji-won Yongin-si, KR 5 25

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