METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
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United States of America Patent
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Jul 18, 2016
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Jul 18, 2016
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Abstract
A structure having: a substrate; a passivation layer disposed over a surface of substrate; an etch stop layer disposed on the passivation layer; resistor comprising tantalum nitride, disposed on the etch stop layer. The etch stop layer has an etch rate at least 100 times slower than an etch rate of the tantalum nitride to a predetermined etchant.
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