Carbon nanotube transistor and logic with end-bonded metal contacts
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United States of America Patent
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May 26, 2020
Grant Date -
Jan 18, 2018
app pub date -
Jul 14, 2016
filing date -
Jul 14, 2016
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Abstract
A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.
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