VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
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United States of America Patent
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Mar 9, 2017
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Jul 15, 2016
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Abstract
A variable resistance memory device may include separate memory cells between separate vertical intersections of first conductive lines extending in a first direction and second conductive lines extending in a second direction intersecting the first direction. A memory cell may include a switching element and a variable resistance structure coupled in series between a first conductive line and a second conductive line. The switching element may include at least one insulative impurity and a chalcogenide material. The variable resistance structure may reversibly switch phases, between a crystalline state and an amorphous state, at a first phase transition temperature, and the switching element may reversibly switch phases, between a crystalline state and an amorphous state, at a second phase transition temperature, where the second phase transition temperature is greater than the first phase transition temperature.
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